OverviewThis product is a Silicon Carbide (SiC) MOSFET in the TSC3PAK surface-mount package featuring a top-side heat dissipation structure. The top heat dissipation surface enables automated SMT mounting while delivering thermal performance comparable to through-hole packages. ROHM's proprietary groove structure secures a creepage distance of 6.66 mm, supporting 1200 V AC peak in Pollution Degree 2 environments. The device uses ROHM 4th Generation (trench) SiC MOSFET technology to achieve low ON resistance and high-speed switching, reducing switching losses and improving efficiency in power conversion circuits. Typical target applications include onboard chargers and electric compressors in xEVs, PV inverters, and server power supplies.
Key descriptive points- Surface-mount SiC MOSFET in TSC3PAK with top-side heat dissipation.
- ROHM groove ensures minimum 6.66 mm creepage distance for 1200 V AC peak (Pollution Degree 2).
- 4th Gen (Trench) SiC MOSFET: low Rds(on) and fast switching.
Features- Wide creepage distance: min. 6.66 mm
- Low on-resistance (typ. 20 mΩ)
- Fast switching speed and fast reverse recovery
- Easy paralleling and simple drive requirements
- Pb-free lead plating; RoHS compliant
Package / Part Specification- Part Number: SCT4020DTWTCR
- Status: Recommended
- Package: TSC3PAK (top-side heat dissipation)
- Packing Type: Taping
- Unit Quantity per Reel: 600
- RoHS: Yes
- MSL: 1
Applications- On-board chargers and electric compressors in xEVs (STANDARD GRADE — not recommended for automotive safety-critical applications)
- PV inverters and server power supplies
Documents & Models (selected)- Datasheet available
- SPICE / PLECS / PSIM simulation models available
Technical specifications- Drain‑source Voltage: 750 V
- Drain‑source On‑state Resistance (Typ.): 20 mΩ
- Generation: 4th Gen (Trench)
- Drain Current: 69 A
- Total Power Dissipation: 208 W
- Junction Temperature (Max.): 175 °C
- Storage Temperature: -40 °C to 175 °C
- Package Size: 14.0 x 18.58 mm (t = 3.625 mm)