High-speed MOSFET SCT4018KTW

silicon carbidehigh-voltage resistanceSiC

Overview
This is a Silicon Carbide (SiC) MOSFET in a TSC3PAK surface-mount package featuring a top-side heat dissipation structure. The top heat sink surface provides thermal performance comparable to conventional through-hole packages while allowing automated PCB assembly. ROHM's groove structure secures a wide creepage distance (min. 6.66 mm), enabling support for 1200 V AC peak in Pollution Degree 2 environments. The device offers low ON resistance and high-speed switching to reduce switching losses and improve conversion efficiency.

Features

• Wide creepage distance: min. 6.66 mm
• Low drain-source on-resistance (typ. 18 mΩ)
• Fast switching speed and fast reverse recovery
• Easy paralleling and simple gate drive
• Pb-free lead plating; RoHS compliant

Package / Images
TSC3PAK package (top-side heat dissipation); package size: 14.0 x 18.58 mm (t = 3.625).

Applications (examples)

• Onboard chargers and electric compressors in xEVs
• PV inverters
• Server power supplies

Part information
Part Number | SCT4018KTWTCR
Status | Recommended
Package | TSC3PAK
Packing Type | Taping
Unit Quantity | 600
Minimum Package Quantity | 600
RoHS | Yes
MSL | 1

Technical specifications

• Drain-source Voltage (V): 1200
• Drain-source On-state Resistance (Typ.) (mΩ): 18
• Generation: 4th Gen (Trench)
• Drain Current (A): 79
• Total Power Dissipation (W): 294
• Junction Temperature (Max.) (°C): 175
• Storage Temperature (Min./Max.) (°C): -40 / 175
• Package Size (mm): 14.0 x 18.58 (t = 3.625)