SiC MOSFET SCT4018KTWHR

silicon carbidefor automotive applicationshigh-speed

Overview
This SiC MOSFET is supplied in a TSC3PAK surface-mount package with a top-side heat-dissipation surface, enabling automated assembly while delivering thermal performance comparable to TO-247-4L through-hole packages. ROHM’s proprietary groove design secures a creepage distance of 6.66 mm, supporting a 1200 V AC peak in Pollution Degree 2 environments. The device offers low RDS(on) and high-speed switching to reduce switching losses and improve efficiency in power conversion circuits, making it suitable for onboard chargers (OBCs), electric compressors in xEVs, PV inverters and high-performance server power supplies.

Development background
SiC adoption has expanded beyond main inverters into auxiliary power-conversion circuits (e.g. OBCs, electric compressors) to improve charging speed and vehicle range. Conventional SiC devices used through-hole packages for heat dissipation, which restrict automated mounting and low-profile designs. This product provides through-hole-comparable thermal performance in a surface-mount form factor, enabling automated assembly and improved board-level reliability.

Application examples

• Automotive: onboard chargers (OBCs)
• Automotive: electric compressors (xEVs)
• Renewable energy: PV inverters
• Data center & server power supplies

Features

• Qualified to AEC-Q101 (automotive grade)
• Wide creepage distance: min. 6.66 mm
• Low drain-source on-state resistance (RDS(on))
• Fast switching speed
• Fast reverse recovery
• Easy to parallel
• Simple gate drive
• Pb-free lead plating; RoHS compliant

Technical specifications

• Part Number: SCT4018KTWHRTCR
• Commercial Model Name: SCT4018KTWHR
• Status: Recommended
• Package: TSC3PAK (14.00 × 18.58 × 3.50 mm)
• Packing Type: Taping
• Unit Quantity: 600
• Minimum Package Quantity: 600
• RoHS: Yes
• MSL: 1
• Drain‑source Voltage (V): 1200
• Drain‑source On‑state Resistance (Typ.) (mΩ): 18
• Generation: 4th Gen (Trench)
• Drain Current (A): 79
• Total Power Dissipation (W): 294
• Junction Temperature (Max.) (°C): 175
• Storage Temperature (Min.) (°C): -40
• Storage Temperature (Max.) (°C): 175
• Package Size (mm): 14.0 × 18.58 (t = 3.625)
• Common Standard: AEC-Q101 (Automotive Grade)