MOSFET for automotive applications SCT4018KTWHR

high-voltage resistancehigh-speedSiC

Overview This product is a SiC MOSFET in the TSC3PAK package. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the product enables automated mounting while achieving heat dissipation performance comparable to conventional through-hole packages. ROHM’s proprietary groove structure secures a creepage distance of 6.66 mm, allowing accommodation of an AC peak voltage of 1200 V in Pollution Degree 2 environments. The device delivers low ON resistance and high-speed switching characteristics, reducing switching losses and improving efficiency and reliability in power conversion circuits for onboard chargers (OBCs), electric compressors for xEVs, PV inverters and server power supplies.

Key Features

• Qualified to AEC-Q101 (Automotive Grade)
• Package: TSC3PAK with top-side heat dissipation
• Wide creepage distance: min. 6.66 mm
• Low on-resistance (Typ. RDS(on): 18 mΩ)
• Fast switching speed and fast reverse recovery
• Easy to parallel
• Simple to drive
• Pb-free lead plating; RoHS compliant

Applications Onboard chargers (OBCs) and electric compressors in xEVs; PV inverters; high-performance server power supplies and other high-voltage power conversion equipment.

Part Information Part Number | SCT4018KTWHRTCR
Status | Recommended
Package | TSC3PAK
Packing Type | Taping
Unit Quantity | 600
Minimum Package Quantity | 600
RoHS | Yes
MSL | 1

Specifications (selected) Drain-source Voltage [V] : 1200
Drain-source On-state Resistance (Typ.) [mΩ] : 18
Generation : 4th Gen (Trench)
Drain Current [A] : 79
Total Power Dissipation [W] : 294
Junction Temperature (Max.) [°C] : 175
Storage Temperature (Min.) [°C] : -40
Storage Temperature (Max.) [°C] : 175
Package Size [mm] : 14.0 x 18.58 (t=3.625)
Common Standard : AEC-Q101 (Automotive Grade)

Features (detailed)

• Top-side heat dissipation structure in surface-mount package achieving heat dissipation comparable to through-hole packages (e.g., TO-247 equivalents)
• Proprietary package groove enabling large creepage distance for high-voltage insulation design
• ROHM 4th Generation SiC MOSFET technology: low ON resistance and reduced switching losses
• Designed for automated mounting while retaining high thermal performance

caractéristiques / spécifications techniques

• Part number (product page): SCT4018KTWHRTCR (also referenced as SCT4018KTWHR)
• Device type: Silicon-carbide (SiC) MOSFET
• Package: TSC3PAK (surface-mount, top-side heat dissipation)
• VDSS (Drain-source voltage): 1200 V
• RDS(on) (Typ.): 18 mΩ
• Rated drain current: 79 A
• Total power dissipation: 294 W
• Maximum junction temperature: 175 °C
• Storage temperature: -40 °C to 175 °C
• Package dimensions: 14.0 x 18.58 mm (thickness 3.625 mm)
• Creepage distance: min. 6.66 mm (supports AC peak 1200 V in Pollution Degree 2)
• Generation / structure: 4th Gen (Trench)
• Compliance / quality: AEC-Q101 (Automotive Grade), RoHS compliant
• Packing: Taping; unit quantity per reel: 600; minimum package quantity: 600