Silicon carbide MOSFET SCT4018KTW
SiCfor automotive applicationshigh-voltage resistance

Silicon carbide MOSFET - SCT4018KTW - ROHM Semiconductor - SiC / for automotive applications / high-voltage resistance
Silicon carbide MOSFET - SCT4018KTW - ROHM Semiconductor - SiC / for automotive applications / high-voltage resistance
Silicon carbide MOSFET - SCT4018KTW - ROHM Semiconductor - SiC / for automotive applications / high-voltage resistance - image - 2
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Characteristics

Options
silicon carbide, SiC, for automotive applications, high-voltage resistance, high-speed
Material
silicon carbide, SiC

Description

Overview
This product is a SiC MOSFET in the TSC3PAK package. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the product enables automated mounting while achieving heat dissipation performance comparable to conventional through-hole packages. The package incorporates ROHM’s proprietary groove structure to secure a creepage distance of 6.66 mm, allowing it to accommodate an AC peak voltage of 1200 V in a Pollution Degree 2 environment while maintaining compatibility with widely adopted market products. The product incorporates ROHM’s 4th Generation SiC MOSFET, achieving low ON resistance and high-speed switching characteristics, which reduce switching losses during power conversion and contribute to greater application efficiency and lower power consumption.

Package / Key Technical Approach
TSC3PAK surface-mount package with top-side heat dissipation; groove structure to secure wide creepage distance (min. 6.66 mm) enabling support for AC peak voltage of 1200 V in Pollution Degree 2 environments. Designed to combine heat dissipation performance comparable to through-hole packages with automated mounting benefits.

Features
  • Wide creepage distance: min. 6.66 mm
  • Low ON-resistance (RDS(on) Typ. 18 mΩ)
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating; RoHS compliant

Application Examples
  • Onboard chargers and electric compressors in xEVs
  • PV inverters
  • Server power supplies
  • Industrial equipment requiring high-efficiency power conversion

Technical Specifications
  • Part Number: SCT4018KTWTCR
  • Model: SCT4018KTW
  • Drain-source Voltage (V): 1200
  • Drain-source On-state Resistance (Typ.) (mΩ): 18
  • Generation: 4th Gen (Trench)
  • Drain Current (A): 79
  • Total Power Dissipation (W): 294
  • Junction Temperature (Max.) (°C): 175
  • Storage Temperature (Min./Max.) (°C): -40 / 175
  • Package: TSC3PAK (top-side heat dissipation)
  • Package Size (mm): 14.0 x 18.58 (t = 3.625)
  • Packing Type: Taping
  • Unit Quantity: 600
  • Minimum Package Quantity: 600
  • RoHS: Yes
  • MSL: 1

Catalogs

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See all of ROHM Semiconductor‘s catalogs

Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall C3 - Stand 520

  • More information

    Other ROHM Semiconductor products

    Silicon-carbide (SiC) Power Devices

    *Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
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