Silicon carbide MOSFET SCT4036KTW

high-voltage resistancehigh-speedSiC

Overview
This SiC MOSFET in a TSC3PAK surface-mount package provides low ON-resistance and high-speed switching for high-voltage power conversion. The package uses a top-side heat dissipation structure to enable automated PCB mounting while delivering heat dissipation performance comparable to conventional through-hole packages (TO-247-4L). A groove structure secures a creepage distance of 6.66 mm, allowing support for a 1200 V AC peak in Pollution Degree 2 environments.

Package / Thermal Design
TSC3PAK surface-mount package with top-side heat dissipation; groove structure ensuring 6.66 mm creepage distance; package dimensions 14.00 × 18.58 × 3.50 mm; heat dissipation performance suitable for high-power applications with automated assembly.

Applications

• Onboard chargers (OBC) and electric compressors for xEVs
• PV inverters and renewable energy converters
• Server power supplies and industrial power modules

Features

• Wide creepage distance: min. 6.66 mm
• Low drain-source ON-resistance (Typ. 36 mΩ)
• Fast switching and reduced switching losses
• Fast reverse recovery
• Easy parallel connection for higher current
• Simple gate driving
• Pb-free lead plating; RoHS compliant

Specifications

• Part Number: SCT4036KTWTCR
• Model: SCT4036KTW
• Status: Recommended
• Package: TSC3PAK (14.00 × 18.58 × 3.50 mm)
• Packing Type: Taping
• Unit Quantity: 600
• Minimum Package Quantity: 600
• RoHS: Yes
• MSL: 1
• Drain‑source Voltage (V): 1200
• Drain‑source On‑state Resistance (Typ.) (mΩ): 36
• Generation: 4th Gen (Trench)
• Drain Current (A): 41
• Total Power Dissipation (W): 163
• Junction Temperature (Max.) (°C): 175
• Storage Temperature (Min./Max.) (°C): -40 / 175
• Package Size (mm): 14.0 × 18.58 (t = 3.625)

Caution
This product is STANDARD GRADE and is not recommended for automotive (AEC) applications requiring automotive qualification.