SiC MOSFET SCT4036DTWHR

high-voltage resistancehigh-speedfor automotive applications

Overview
This SiC MOSFET in a TSC3PAK surface-mount package integrates a top-side heat-dissipation structure that enables automated placement while delivering thermal performance comparable to through-hole packages. A proprietary groove secures a minimum creepage distance of 6.66 mm, allowing support of 1200 V AC peak in Pollution Degree 2 environments. ROHM’s 4th generation SiC MOSFET technology provides low RDS(on) and high-speed switching to reduce switching losses and improve conversion efficiency in power circuits.

Features

• Automotive qualified: AEC-Q101
• Wide creepage distance: min. 6.66 mm (proprietary groove)
• Low on-resistance (low RDS(on))
• Fast switching and fast reverse recovery
• Easy paralleling and simple gate drive
• Pb-free plating; RoHS compliant

Specifications (summary)

• Part number: SCT4036DTWHRTCR
• Drain-source voltage: 750 V
• Drain-source on-state resistance (typ.): 36 mΩ
• Generation: 4th Gen (Trench)
• Drain current (reference): 40 A
• Total power dissipation: 128 W
• Maximum junction temperature: 175 °C
• Storage temperature range: -40 to 175 °C
• Package: TSC3PAK (top-side heat dissipation)
• Package size: 14.0 x 18.58 mm (t ≈ 3.625 mm)
• Packing type: Taping; unit quantity per reel: 600; minimum package quantity: 600
• RoHS: Yes; MSL: 1

Applications

• Onboard chargers (OBCs) for xEVs
• Electric compressors for xEVs
• PV inverters
• High-performance server and telecom power supplies