High-voltage resistance MOSFET SCT4020DTWHR

high-speedfor automotive applicationsSiC

Overview
This is a SiC MOSFET in the TSC3PAK package featuring a top-side heat dissipation structure. The TSC3PAK delivers thermal performance approaching conventional through-hole packages while enabling automated surface-mount assembly. ROHM's groove structure secures a minimum creepage distance of 6.66 mm, allowing support for AC peak voltages up to 1200 V in Pollution Degree 2 environments. The device offers low on-resistance and fast switching to reduce switching losses in power conversion circuits. Typical applications include onboard chargers (OBC) and electric compressors for xEVs, PV inverters and server power supplies.

Package & Mechanical
Package: TSC3PAK (top-side heat dissipation). Reported package dimensions: 14.0 × 18.58 mm (t = 3.625) and referenced elsewhere as 14.00 × 18.58 × 3.50 mm. Top-side thermal design enables SMT assembly while approaching through-hole thermal capability.

Features

• Qualified to AEC-Q101 (Automotive Grade)
• Wide creepage distance: min. 6.66 mm (ROHM groove structure)
• Low drain-source on-resistance (typ. 20 mΩ)
• Fast switching speed and fast reverse recovery
• Easy to parallel and simple to drive
• Pb-free lead plating; RoHS compliant

Product identifiers & packaging
Part number(s): SCT4020DTWHR (product) / SCT4020DTWHRTCR (part details). Status: Recommended. Packing type: Taping. Unit quantity per tape/reel: 600. Minimum package quantity: 600. RoHS: Yes. MSL: 1.

Supporting information (summary)
Datasheet, application notes, thermal design guides and simulation models (SPICE, PLECS, PSIM) are available for the product family and TSC3PAK package. Documentation includes thermal performance data, gate drive guidance, snubber recommendations, parallel-connection oscillation countermeasures and thermal measurement methods.

Technical specifications

• Part number (page): SCT4020DTWHRTCR
• Model: SCT4020DTWHR
• Drain-Source Voltage (V): 750 V
• Drain-Source On-state Resistance (Typ.) [mΩ]: 20 mΩ
• Generation: 4th Gen (Trench)
• Drain Current [A]: 69 A
• Total Power Dissipation [W]: 208 W
• Junction Temperature (Max.) [°C]: 175 °C
• Storage Temperature [°C]: -40 to 175
• Package size [mm]: 14.0 × 18.58 (t = 3.625) (TSC3PAK)
• Creepage distance: min. 6.66 mm (ROHM groove)
• AC peak voltage support in Pollution Degree 2: up to 1200 V
• Common standard: AEC-Q101 (Automotive Grade)
• Packing type: Taping; Unit quantity per reel: 600; Minimum package quantity: 600
• RoHS: Yes; MSL: 1