Silicon carbide MOSFET SCT4045DTWHR

for automotive applicationshigh-voltage resistancehigh-speed

Product overview
This SiC MOSFET in the TSC3PAK package features a top-side heat dissipation surface that delivers thermal performance comparable to through-hole packages while remaining surface-mount compatible. ROHM's proprietary groove structure secures a 6.66 mm creepage distance, enabling support for 1200 V AC peak in Pollution Degree 2 environments. The device provides low RDS(on) and high switching speed to reduce switching losses and improve efficiency in power conversion circuits, making it suited for xEV onboard chargers, electric compressors, PV inverters and server power supplies.

Application examples

• Automotive: onboard chargers (OBC), electric compressors
• Industrial / Energy: PV inverters, server power supplies

Features

• AEC-Q101 qualified (automotive grade)
• Wide creepage distance: min. 6.66 mm (supports 1200 V AC peak at Pollution Degree 2)
• Low on-resistance (RDS(on) typ. 45 mΩ)
• Fast switching and fast reverse recovery
• Easy to parallel and simple to drive
• Pb-free plating; RoHS compliant

Part specifications
Part Number | SCT4045DTWHRTCR
Status | Recommended
Package | TSC3PAK
Packing Type | Taping
Unit Quantity | 600
Minimum Package Quantity | 600
RoHS | Yes
MSL | 1

Technical specifications

• Drain-source Voltage (Vds): 750 V
• Drain-source On-state Resistance (Typ.) (RDS(on)): 45 mΩ
• Generation: 4th Gen (Trench)
• Drain Current (Id): 33 A
• Total Power Dissipation: 106 W
• Junction Temperature (Max.): 175 °C
• Storage Temperature (Min.): -40 °C
• Storage Temperature (Max.): 175 °C
• Package Size: 14.0 x 18.58 mm (t = 3.625 mm)
• Common Standard: AEC-Q101 (Automotive Grade)