Silicon carbide MOSFET SCT4026DTWHR
high-voltage resistancefor automotive applicationsSiC

Silicon carbide MOSFET - SCT4026DTWHR - ROHM Semiconductor - high-voltage resistance / for automotive applications / SiC
Silicon carbide MOSFET - SCT4026DTWHR - ROHM Semiconductor - high-voltage resistance / for automotive applications / SiC
Silicon carbide MOSFET - SCT4026DTWHR - ROHM Semiconductor - high-voltage resistance / for automotive applications / SiC - image - 2
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Characteristics

Options
silicon carbide, high-voltage resistance, for automotive applications, SiC, high-speed
Material
SiC, silicon carbide

Description

Product overview
This device is a SiC MOSFET in a TSC3PAK package featuring a top-cooled structure. By locating the heat-dissipation surface on the package top, TSC3PAK achieves thermal performance comparable to conventional through-hole packages while remaining suitable for surface-mount assembly. A proprietary groove structure provides a creepage distance of 6.66 mm, supporting up to 1200 V AC peak in pollution degree 2 environments. Fourth-generation trench SiC technology delivers low on-resistance and fast switching for improved efficiency in power conversion circuits.

Key features
  • AEC-Q101 qualified (Automotive grade)
  • Large creepage distance: min. 6.66 mm
  • Low drain-source on-state resistance (RDS(on), typ. 26 mΩ)
  • Fast switching characteristics
  • Fast reverse-recovery behavior
  • Easy to parallelize
  • Simple to drive
  • Pb-free lead plating; RoHS compliant


Package / thermal / reliability
TSC3PAK package with a top-cooled design enables surface-mount assembly while delivering thermal dissipation comparable to traditional through-hole packages. The groove structure secures a 6.66 mm creepage distance and supports 1200 V AC peak under pollution degree 2, enabling safer insulation design and increased reliability for high-voltage applications.

Recommended applications
  • On-board chargers (OBC) for xEVs
  • Electric compressors (E-Comp) in xEVs
  • Photovoltaic (PV) inverters
  • Server power supplies / datacenter PSUs


Characteristics / Technical specifications
  • Part number: SCT4026DTWHRTCR
  • Status: Recommended
  • Package: TSC3PAK
  • Packaging: Taping
  • Units per reel: 600
  • Minimum order quantity: 600
  • RoHS: Yes
  • MSL: 1
  • Drain-source voltage (V): 750 V
  • Drain-source on-state resistance (Typ.) (mΩ): 26 mΩ
  • Generation: 4th Gen (Trench)
  • Drain current (A): 54 A
  • Total power dissipation (W): 163 W
  • Junction temperature (Max.) (°C): 175 °C
  • Storage temperature (Min./Max.) (°C): -40 / 175 °C
  • Package size [mm]: 14.0 x 18.58 (t = 3.625)
  • Creepage distance: min. 6.66 mm (groove structure)
  • Common standard: AEC-Q101 (Automotive Grade)

Catalogs

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Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall C3 - Stand 520

  • More information

    Other ROHM Semiconductor products

    Silicon-carbide (SiC) Power Devices

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