OverviewThis product is a SiC MOSFET in the TSC3PAK surface-mount package featuring a top-side heat dissipation surface. The top-side heat dissipation enables automated mounting while delivering thermal performance comparable to conventional through-hole packages (e.g. TO-247-4L). ROHM’s proprietary groove structure secures a creepage distance of 6.66 mm, supporting an AC peak voltage of 1200 V in Pollution Degree 2 environments. The device incorporates ROHM 4th Generation SiC MOSFET (Trench) technology to achieve low RDS(on) and high-speed switching, reducing switching losses in power conversion circuits.
Features- Qualified to AEC-Q101 (Automotive Grade)
- Wide creepage distance: min. 6.66 mm
- Low drain-source on-state resistance (RDS(on) typ. 65 mΩ)
- Fast switching speed and fast reverse recovery
- Easy to parallel and simple to drive
- Pb-free lead plating; RoHS compliant
Package / ThermalTSC3PAK surface-mount package with top-side heat dissipation surface, providing heat dissipation performance comparable to conventional through-hole packages while enabling automated PCB assembly. ROHM groove structure secures creepage distance to support safe insulation design in high-voltage applications.
Application Examples- Automotive: Onboard chargers (OBCs), electric compressors
- PV inverters
- High-performance server power supplies and industrial power conversion
Specifications- Part Number: SCT4065DTWHRTCR
- Commercial model name: SCT4065DTWHR
- Part status: Recommended
- Drain-source Voltage (V): 750 V
- Drain-source On-state Resistance (Typ.) (mΩ): 65 mΩ
- Generation: 4th Gen (Trench)
- Drain Current (A): 24 A
- Total Power Dissipation (W): 81 W
- Junction Temperature (Max.) (°C): 175 °C
- Storage Temperature (Min. / Max.) (°C): -40 / 175
- Package: TSC3PAK
- Package Size (mm): 14.0 x 18.58 (t = 3.625)
- Packing Type: Taping
- Unit Quantity / Minimum Package Quantity: 600
- RoHS: Yes
- MSL: 1
- Common Standard: AEC-Q101 (Automotive Grade)