Silicon carbide MOSFET SCT4065DTWHR
for automotive applicationshigh-voltage resistanceSiC

Silicon carbide MOSFET - SCT4065DTWHR - ROHM Semiconductor - for automotive applications / high-voltage resistance / SiC
Silicon carbide MOSFET - SCT4065DTWHR - ROHM Semiconductor - for automotive applications / high-voltage resistance / SiC
Silicon carbide MOSFET - SCT4065DTWHR - ROHM Semiconductor - for automotive applications / high-voltage resistance / SiC - image - 2
Add to favorites
Compare this product

Characteristics

Options
silicon carbide, for automotive applications, high-voltage resistance, SiC, high-speed
Material
in semiconductor, SiC, silicon carbide

Description

Overview
This product is a SiC MOSFET in the TSC3PAK surface-mount package featuring a top-side heat dissipation surface. The top-side heat dissipation enables automated mounting while delivering thermal performance comparable to conventional through-hole packages (e.g. TO-247-4L). ROHM’s proprietary groove structure secures a creepage distance of 6.66 mm, supporting an AC peak voltage of 1200 V in Pollution Degree 2 environments. The device incorporates ROHM 4th Generation SiC MOSFET (Trench) technology to achieve low RDS(on) and high-speed switching, reducing switching losses in power conversion circuits.

Features
  • Qualified to AEC-Q101 (Automotive Grade)
  • Wide creepage distance: min. 6.66 mm
  • Low drain-source on-state resistance (RDS(on) typ. 65 mΩ)
  • Fast switching speed and fast reverse recovery
  • Easy to parallel and simple to drive
  • Pb-free lead plating; RoHS compliant

Package / Thermal
TSC3PAK surface-mount package with top-side heat dissipation surface, providing heat dissipation performance comparable to conventional through-hole packages while enabling automated PCB assembly. ROHM groove structure secures creepage distance to support safe insulation design in high-voltage applications.

Application Examples
  • Automotive: Onboard chargers (OBCs), electric compressors
  • PV inverters
  • High-performance server power supplies and industrial power conversion

Specifications
  • Part Number: SCT4065DTWHRTCR
  • Commercial model name: SCT4065DTWHR
  • Part status: Recommended
  • Drain-source Voltage (V): 750 V
  • Drain-source On-state Resistance (Typ.) (mΩ): 65 mΩ
  • Generation: 4th Gen (Trench)
  • Drain Current (A): 24 A
  • Total Power Dissipation (W): 81 W
  • Junction Temperature (Max.) (°C): 175 °C
  • Storage Temperature (Min. / Max.) (°C): -40 / 175
  • Package: TSC3PAK
  • Package Size (mm): 14.0 x 18.58 (t = 3.625)
  • Packing Type: Taping
  • Unit Quantity / Minimum Package Quantity: 600
  • RoHS: Yes
  • MSL: 1
  • Common Standard: AEC-Q101 (Automotive Grade)

Catalogs

No catalogs are available for this product.

See all of ROHM Semiconductor‘s catalogs

Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall C3 - Stand 520

  • More information

    Other ROHM Semiconductor products

    Silicon-carbide (SiC) Power Devices

    *Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
    About DirectIndustry
    DirectIndustry is a marketplace that offers B2B players a complete experience, from product sourcing to purchase. DirectIndustry is an entity of VirtualExpo Group.