High-voltage resistance MOSFET SCT4036KTWHR
SiCsilicon carbidefor automotive applications

High-voltage resistance MOSFET - SCT4036KTWHR - ROHM Semiconductor - SiC / silicon carbide / for automotive applications
High-voltage resistance MOSFET - SCT4036KTWHR - ROHM Semiconductor - SiC / silicon carbide / for automotive applications
High-voltage resistance MOSFET - SCT4036KTWHR - ROHM Semiconductor - SiC / silicon carbide / for automotive applications - image - 2
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Characteristics

Options
high-voltage resistance, SiC, silicon carbide, for automotive applications, high-speed
Material
silicon carbide, SiC, in semiconductor

Description

Overview
This device is a SiC MOSFET in a TSC3PAK surface-mount package with a top-side heat dissipation structure. The package places the thermal dissipation surface on the top of the package, providing heat dissipation performance comparable to TO-247-class through-hole packages while allowing automated surface-mount assembly. A proprietary groove structure secures a creepage distance of 6.66 mm, supporting an AC peak voltage of 1200 V in Pollution Degree 2 environments. The 4th-generation trench SiC device delivers low RDS(on) and fast switching to reduce switching losses and improve efficiency in power conversion circuits.

Part information
  • Part Number: SCT4036KTWHRTCR
  • Status: Recommended
  • Package: TSC3PAK
  • Packing Type: Taping
  • Unit Quantity (per reel): 600
  • Minimum Package Quantity: 600
  • RoHS: Yes
  • MSL: 1


Features
  • Qualified to AEC-Q101 (Automotive Grade)
  • Wide creepage distance: min. 6.66 mm
  • Low ON-resistance (RDS(on))
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating; RoHS compliant


Package / Thermal
TSC3PAK: top-side heat dissipation with groove structure securing creepage distance (6.66 mm). Surface-mount package offering heat dissipation comparable to TO-247-class through-hole packages, enabling automated mounting and reduced assembly cost while maintaining high reliability.

Applications
  • Automotive: onboard chargers (OBCs), electric compressors for xEVs
  • Photovoltaic (PV) inverters
  • High-performance server power supplies and other high-voltage, high-efficiency power conversion systems


Specifications
  • Model: SCT4036KTWHR
  • Drain-source Voltage (V): 1200
  • Drain-source On-state Resistance (Typ.) (mΩ): 36
  • Generation: 4th Gen (Trench)
  • Drain Current (A): 41
  • Total Power Dissipation (W): 163
  • Junction Temperature (Max.) (°C): 175
  • Storage Temperature (Min.) (°C): -40
  • Storage Temperature (Max.) (°C): 175
  • Package Size (mm): 14.0 x 18.58 (t = 3.625)
  • Common Standard: AEC-Q101 (Automotive Grade)
  • Package: TSC3PAK (top-side heat dissipation)
  • Packing Type: Taping
  • Unit Quantity (per reel): 600
  • Minimum Package Quantity: 600
  • RoHS: Yes
  • MSL: 1

Catalogs

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See all of ROHM Semiconductor‘s catalogs

Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall C3 - Stand 520

  • More information

    Other ROHM Semiconductor products

    Silicon-carbide (SiC) Power Devices

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