High-voltage resistance MOSFET SCT4050KTW

high-speedsilicon carbideSiC

Product Overview
This component is a 1200 V, 31 A Silicon-Carbide (SiC) MOSFET, model SCT4050KTW, in the TSC3PAK surface-mount package. The package uses a top-side heat dissipation structure to provide heat removal comparable to through-hole packages while enabling automated SMD assembly. A proprietary groove on the package secures a wide creepage distance (min. 6.66 mm), supporting 1200 V AC peak in Pollution Degree 2 environments. The device offers low ON-resistance and fast switching to reduce switching losses and improve power conversion efficiency for high-voltage, high-efficiency systems.

Package & Images
Package: TSC3PAK (surface-mount, top-side heat dissipation). Suitable for automated placement; thermal performance close to equivalent through-hole packages while maintaining a compact SMD footprint.

Features

• Wide creepage distance: min. 6.66 mm
• Low drain-source ON-resistance (RDS(on) typ. 50 mΩ)
• Fast switching characteristics
• Fast reverse-recovery
• Easy to parallel for higher current
• Simple gate drive requirements
• Pb-free plating; RoHS compliant

Application Examples

• xEV onboard chargers (OBC) and electric compressors
• PV inverters (solar power conversion)
• Server power supplies and industrial high-efficiency power equipment

Part Specifications (summary table)
Part Number | SCT4050KTWTCR
Status | Recommended
Package | TSC3PAK
Packing Type | Taping
Unit Quantity | 600
Minimum Package Quantity | 600
RoHS | Yes
MSL | 1

Characteristics / Technical Specifications

• Model: SCT4050KTW
• Drain-Source Voltage (VDS): 1200 V
• Drain-Source On-state Resistance (Typ.): 50 mΩ
• Generation: 4th Gen (Trench)
• Drain Current (ID): 31 A
• Total Power Dissipation: 128 W
• Junction Temperature (Max.): 175 °C
• Storage Temperature Range: -40 °C to 175 °C
• Package Size (mm): 14.0 x 18.58 (t = 3.625)
• Package type: TSC3PAK (top-side heat dissipation)