High-voltage resistance MOSFET SCT4018KTW

high-speedSiCfor automotive applications

Overview
This is a 4th-generation trench SiC MOSFET in a TSC3PAK surface-mount package with top-side heat dissipation. The top heat-spreading surface enables automated SMT assembly while delivering thermal performance comparable to conventional through-hole packages. A proprietary groove structure secures a creepage distance of 6.66 mm, allowing support for 1200 V AC peak in Pollution Degree 2 environments. The device offers low RDS(on) and fast switching, reducing switching losses in power-conversion applications.

Key product summary
1200 V, 79 A, 9-pin SMD SiC MOSFET (Trench), TSC3PAK, low RDS(on)

Part details
Part Number | SCT4018KTWTCR
Status | Recommended
Package | TSC3PAK (top-side heat dissipation)
Packing Type | Taping
Unit Quantity | 600
Minimum Package Quantity | 600
RoHS | Yes
MSL | 1

Features

• Wide creepage distance: min. 6.66 mm
• Low on-resistance (low RDS(on))
• Fast switching speed
• Fast reverse recovery
• Easy to parallel for higher current
• Simple gate drive requirements
• Pb-free lead plating; RoHS compliant

Overview / Development background
The TSC3PAK package places the heat-dissipation surface on the package top, enabling high thermal performance in an SMD form factor and supporting automated mounting processes. The groove-structured package secures 6.66 mm creepage distance for safer insulation design under Pollution Degree 2, allowing 1200 V AC peak handling. Combined with ROHM’s 4th-generation trench SiC MOSFET technology, the device achieves low ON resistance and high-speed switching to lower switching losses and improve conversion efficiency.

Application examples

• Onboard chargers (xEV OBC)
• Electric compressors for xEVs
• PV inverters (photovoltaic inverters)
• Server power supplies and other industrial power systems

Technical specifications

• Drain‑source Voltage (V): 1200
• Drain‑source On‑state Resistance (Typ.) (mΩ): 18
• Generation: 4th Gen (Trench)
• Drain Current (A): 79
• Total Power Dissipation (W): 294
• Junction Temperature (Max.) (°C): 175
• Storage Temperature (Min.) (°C): -40
• Storage Temperature (Max.) (°C): 175
• Package Size (mm): 14.0 x 18.58 (t = 3.625)
• Package: TSC3PAK (top-side heat dissipation)
• Packing: Taping; Unit Quantity: 600; Minimum Package Quantity: 600