High-voltage resistance MOSFET SCT4013DTW

SiChigh-speedsilicon carbide

Overview This SiC MOSFET is supplied in the TSC3PAK (14.00 × 18.58 × 3.50 mm) 9‑pin SMD package featuring top-side heat dissipation. The package design enables automated surface mounting while delivering heat dissipation comparable to through-hole TO-247‑class packages. A proprietary groove structure provides a minimum creepage distance of 6.66 mm, supporting AC peak voltages up to 1200 V in Pollution Degree 2 environments. The device uses ROHM's 4th‑generation trench SiC MOSFET technology to achieve low RDS(on) and high‑speed switching for reduced switching losses and improved conversion efficiency.

Features

• Wide creepage distance: min. 6.66 mm (supports AC peak 1200 V, Pollution Degree 2)
• Low ON resistance (Typ. RDS(on) 13 mΩ)
• Fast switching speed and reduced switching loss
• Fast reverse recovery characteristics
• Easy parallel operation
• Simple gate drive requirements
• Pb‑free lead plating; RoHS compliant

Applications

• xEV onboard chargers (OBC) and electric compressors
• PV inverters and renewable energy power conversion
• Server power supplies and industrial equipment requiring high‑efficiency power conversion

Product identifiers / Packaging Part Number | SCT4013DTWTCR
Status | Recommended
Package | TSC3PAK (14.00 × 18.58 × 3.50 mm)
Packing Type | Taping
Unit Quantity | 600
Minimum Package Quantity | 600
RoHS | Yes
MSL | 1

Technical specifications

• Model: SCT4013DTW
• Drain–Source Voltage (Vds): 750 V
• Drain–Source On‑state Resistance (Typ.) RDS(on): 13 mΩ
• Generation / Structure: 4th Gen (Trench)
• Drain Current (Id): 102 A
• Total Power Dissipation: 294 W
• Junction Temperature (Max.): 175 °C
• Storage Temperature: -40 °C to 175 °C
• Package Size: 14.0 × 18.58 mm (t ≈ 3.625 mm)
• Package Type: 9‑pin SMD, TSC3PAK with top‑side heat dissipation
• Creepage Distance: min. 6.66 mm (ROHM groove structure)
• Target applications: xEV onboard chargers, electric compressors, PV inverters, server PSUs