SiC MOSFET SCT4062KTWHR
for automotive applicationshigh-speedsilicon carbide

SiC MOSFET - SCT4062KTWHR - ROHM Semiconductor - for automotive applications / high-speed / silicon carbide
SiC MOSFET - SCT4062KTWHR - ROHM Semiconductor - for automotive applications / high-speed / silicon carbide
SiC MOSFET - SCT4062KTWHR - ROHM Semiconductor - for automotive applications / high-speed / silicon carbide - image - 2
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Characteristics

Options
SiC, for automotive applications, high-speed, silicon carbide, high-voltage resistance
Material
SiC, silicon carbide

Description

Overview
This SiC MOSFET SCT4062KTWHR in TSC3PAK is designed for high‑voltage power conversion and switching applications. The device combines low ON resistance and fast switching to reduce switching losses in power conversion circuits while ensuring reliability for automotive and industrial environments.

Package & Key Benefits
TSC3PAK: surface‑mount package with top‑side heat dissipation enabling automated mounting and thermal performance comparable to TO‑247‑class through‑hole packages. ROHM proprietary groove secures a creepage distance of min. 6.66 mm, supporting 1200 V AC peak in Pollution Degree 2 environments.

Features
  • Qualified to AEC‑Q101 (automotive grade)
  • Wide creepage distance: min. 6.66 mm
  • Low drain‑source ON resistance (RDS(on) typ. 62 mΩ)
  • Fast switching characteristics and fast reverse recovery
  • Easy parallel operation and simple drive requirements
  • Pb‑free lead plating; RoHS compliant

Application Examples
  • Automotive: onboard chargers (OBCs), electric compressors
  • PV inverters and renewable energy converters
  • Server and telecom power supplies

Development Background
Designed to meet industry demands for higher efficiency and automated surface mounting, this surface‑mount SiC MOSFET achieves through‑hole‑equivalent thermal performance while reducing assembly cost and maintaining high reliability for xEV and industrial power systems.

Technical specifications
  • Part number: SCT4062KTWHRTCR
  • Model name: SCT4062KTWHR
  • Package: TSC3PAK (surface‑mount, top‑side heat dissipation)
  • Packing type: Taping
  • Unit quantity / Minimum package quantity: 600
  • RoHS: Yes
  • MSL: 1
  • Drain‑source voltage (V): 1200 V
  • Drain‑source ON‑state resistance (Typ.) (mΩ): 62 mΩ
  • Generation: 4th Gen (Trench)
  • Drain current (A): 25 A
  • Total power dissipation (W): 106 W
  • Junction temperature (Max.) (°C): 175 °C
  • Storage temperature (°C): -40 to 175 °C
  • Package size (mm): 14.0 x 18.58 (t = 3.625)
  • Common standard: AEC‑Q101 (Automotive Grade)

Catalogs

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See all of ROHM Semiconductor‘s catalogs

Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall C3 - Stand 520

  • More information

    Other ROHM Semiconductor products

    Silicon-carbide (SiC) Power Devices

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