High-voltage resistance MOSFET SCT4090KTW

high-speedSiCfor automotive applications

Overview
This SiC MOSFET in a TSC3PAK surface-mount package features a top-side heat dissipation structure that places the thermal surface on the package top, enabling automated PCB mounting while delivering thermal performance comparable to through-hole packages. ROHM's proprietary groove structure secures a creepage distance of 6.66 mm, supporting AC peak voltages up to 1200 V in Pollution Degree 2 environments. The device offers low ON-resistance and fast switching to reduce switching losses and improve efficiency in power conversion circuits. Typical applications include onboard chargers and electric compressors in xEVs, PV inverters and server power supplies.

Part information / Packaging

• Part number: SCT4090KTWTCR
• Status: Recommended
• Package: TSC3PAK (top-side heat dissipation)
• Packing type: Taping
• Unit quantity: 600 / reel
• Minimum package quantity: 600
• RoHS: Yes
• MSL: 1

Features

• Wide creepage distance: min. 6.66 mm (ROHM groove structure)
• Low ON-resistance (Rds(on) typ. 90 mΩ)
• Fast switching speed and reduced switching losses
• Fast reverse recovery
• Easy to parallel
• Simple gate drive
• Pb-free lead plating; RoHS compliant

Technical specifications

• Model: SCT4090KTWTCR
• Drain-Source Voltage (Vdss): 1200 V
• Drain-Source On-state Resistance (Rds(on)) (Typ.): 90 mΩ
• Generation: 4th Gen (Trench)
• Drain Current (Id): 18 A
• Total Power Dissipation (Pd): 81 W
• Junction Temperature (Tj max): 175 °C
• Storage Temperature: -40 °C to 175 °C
• Package size: 14.0 x 18.58 mm (t = 3.625 mm)
• Package type: 9-pin SMD (TSC3PAK) with top-side heat dissipation
• Creepage distance: 6.66 mm (supports AC peak 1200 V in Pollution Degree 2)

Typical applications

• xEV: onboard chargers, electric compressors
• PV inverters
• Server and telecom power supplies