Silicon carbide MOSFET SCT4045DTW

for automotive applicationshigh-voltage resistanceSiC

Overview
This SiC MOSFET (model SCT4045DTW) is supplied in the TSC3PAK surface-mount package with a top-side heat dissipation structure allowing automated assembly while providing heat dissipation comparable to conventional through-hole packages. ROHM’s proprietary groove design secures a minimum creepage distance of 6.66 mm, supporting AC peak voltages up to 1200 V in Pollution Degree 2 environments. The device integrates ROHM’s 4th Generation SiC MOSFET technology to achieve low RDS(on) and high-speed switching for improved power conversion efficiency.

Key Features

• Top-side heat dissipation structure for surface-mount package with thermal performance comparable to through-hole types
• Wide creepage distance: minimum 6.66 mm (supports 1200 V AC peak in Pollution Degree 2)
• Low drain-source on-resistance (RDS(on))
• High-speed switching
• Fast reverse-recovery characteristic
• Easy parallel operation
• Simple gate drive requirements
• Pb-free lead plating; RoHS compliant

Application Examples

• On-board chargers (OBC) and electric compressors in xEVs
• PV inverters
• Server power supplies and industrial high-efficiency power equipment

Package & Part Information

• Packaged part number: SCT4045DTWTCR
• Package: TSC3PAK (surface-mount)
• Packing type: Taping
• Unit quantity per package: 600
• Minimum package quantity: 600
• RoHS: Yes
• MSL: 1

Technical specifications

• Model (commercial name): SCT4045DTW
• Drain-source voltage (VDS): 750 V
• Drain-source on-state resistance (typ.) RDS(on): 45 mΩ
• Generation: 4th Gen (Trench)
• Drain current (ID): 33 A
• Total power dissipation: 106 W
• Maximum junction temperature: 175 °C
• Storage temperature range: -40 to 175 °C
• Package size (mm): 14.0 x 18.58 (t = 3.625)

Design & resources

• SPICE/PLECS/PSIM models, application notes and thermal/packaging documentation available to support thermal design, parallel operation and gate-drive validation