High-voltage resistance MOSFET SCT4027KTWHR

high-speedsilicon carbidefor automotive applications

Overview
This SiC MOSFET in a TSC3PAK surface-mount package features top-side heat dissipation, delivering through-hole comparable thermal performance while enabling automated SMD mounting. ROHM's proprietary trench groove ensures a minimum creepage distance of 6.66 mm, supporting 1200 V AC peak in Pollution Degree 2 environments. The device provides low ON-resistance and fast switching to reduce switching losses in power conversion.

Development Background
As SiC expands into power-conversion circuits (e.g., onboard chargers and electric compressors) and industrial equipment requiring high efficiency, there is demand for surface-mount SiC devices that combine automated mounting, low profile and through-hole-equivalent thermal performance. SCT4027KTWHR addresses this need by integrating a top-cooling TSC3PAK and ROHM 4th-generation trench technology.

Application Examples

• Automotive: onboard chargers (OBC), electric compressors
• Photovoltaic inverters
• Server and high-performance power supplies

Key Features

• AEC-Q101 qualified (automotive grade)
• Wide creepage distance: min. 6.66 mm (ROHM groove)
• Low Rds(on) (Typ. 27 mΩ)
• Fast switching and fast reverse recovery
• Easy paralleling and simple drive
• Pb-free plating; RoHS compliant

Technical Specifications

• Part Number: SCT4027KTWHRTCR
• Status: Recommended
• Package: TSC3PAK (top-cooling)
• Packing: Taping; Unit quantity: 600
• Vds: 1200 V
• Rds(on) Typ.: 27 mΩ
• Drain Current: 54 A
• Total Power Dissipation: 208 W
• Junction Temp (Max): 175 °C
• Storage Temp: -40 to 175 °C
• Package Size: 14.0 × 18.58 mm (t = 3.625)
• Standards: AEC-Q101, RoHS; MSL = 1