MOSFET for automotive applications SCT4026DTW

silicon carbideSiChigh-speed

Overview
The SCT4026DTWTCR is a 4th generation Trench SiC MOSFET in a TSC3PAK surface-mount package featuring a top-side heat dissipation structure. The package places the thermal surface on the top of the device, enabling automated SMT assembly while delivering heat dissipation comparable to through-hole packages. A proprietary groove secures a minimum creepage distance of 6.66 mm, supporting AC peak voltages up to 1200 V in Pollution Degree 2 environments. The device offers low RDS(on) and fast switching to reduce switching losses in power conversion applications.

Applications

• On-board chargers (OBC) and electric compressors for xEVs
• Photovoltaic (PV) inverters
• Server and data center power supplies

Package / Packing
Part Number | SCT4026DTWTCR
Status | Recommended
Package | TSC3PAK (top-side heat dissipation)
Packing Type | Taping
Unit Quantity | 600
Minimum Package Quantity | 600
RoHS | Yes
MSL | 1

Key Features

• Wide creepage distance: min. 6.66 mm (groove structure)
• Top-side heat dissipation (TSC3PAK) for SMT automated mounting with heat performance comparable to through-hole packages
• Low ON resistance (RDS(on) typ. 26 mΩ)
• High-speed switching and fast reverse recovery
• Easy paralleling to increase current capacity
• Simple gate drive requirements
• Pb-free plating; RoHS compliant

Additional Notes
The top-side heat dissipation and groove design support safer insulation margins and higher reliability for high-voltage power conversion while reducing assembly costs through automated surface-mount processes. This is a standard-grade product; verify suitability for safety-critical or automotive-grade requirements before use.

Technical Specifications

• Part number: SCT4026DTWTCR
• Drain–source voltage (VDS): 750 V
• Drain–source on-state resistance (RDS(on), Typ.): 26 mΩ
• Drain current (ID): 54 A
• Total power dissipation: 163 W
• Junction temperature (Tj Max): 175 °C
• Storage temperature: -40 °C to 175 °C
• Package: TSC3PAK (top-side heat dissipation)
• Package size: 14.0 x 18.58 mm (t = 3.625 mm)
• Creepage distance: 6.66 mm (supports 1200 V AC peak in Pollution Degree 2)
• Generation: 4th Gen (Trench) SiC MOSFET
• Unit quantity per tape: 600
• Minimum package quantity: 600
• RoHS: Yes
• MSL: 1