SiC MOSFET SCT4050KTWHR

for automotive applicationshigh-voltage resistancehigh-speed

Overview
This device is a SiC MOSFET in a TSC3PAK surface-mount package. The top-side heat dissipation structure places the thermal surface on the package top, enabling automated mounting while delivering heat dissipation comparable to through-hole packages. ROHM's proprietary groove structure secures a creepage distance of 6.66 mm, supporting an AC peak voltage of 1200 V under Pollution Degree 2. The device uses ROHM's 4th Generation (Trench) SiC MOSFET technology to achieve low Rds(on) and high-speed switching, reducing switching losses and improving efficiency in power conversion circuits.

Features

• Qualified to AEC-Q101 (automotive grade)
• Wide creepage distance: min. 6.66 mm
• Low drain-source on-resistance (Rds(on))
• Fast switching speed and low switching loss
• Fast reverse recovery
• Easy to parallel for higher current capability
• Simple gate drive requirements
• Pb-free lead plating; RoHS compliant

Applications

• Automotive systems: onboard chargers (OBCs), electric compressors
• PV inverters
• High-performance server and telecom power supplies

Technical specifications

• Part Number (page variant): SCT4050KTWHRTCR
• Model name: SCT4050KTWHR
• Package: TSC3PAK (top-side heat dissipation)
• Drain-source voltage (Vdss): 1200 V
• Drain current (Id): 31 A
• Drain-source on-state resistance (Typ.) (Rds(on)): 50 mΩ
• Generation: 4th Gen (Trench)
• Total power dissipation: 128 W
• Junction temperature (Tj max): 175 °C
• Storage temperature: -40 °C to 175 °C
• Package size: 14.0 x 18.58 mm (t = 3.625 mm)
• Packing type: Taping
• Unit quantity / Minimum package quantity: 600
• RoHS: Yes
• MSL: 1
• Common standard: AEC-Q101 (Automotive Grade)
• Status: Recommended

Packaging & notes
TSC3PAK is a surface-mount package optimized for top-side heat dissipation, allowing automated assembly with thermal performance comparable to through-hole packages (e.g., TO-247). ROHM provides datasheets and thermal application notes to support thermal design, paralleling guidance and system integration recommendations.