High-voltage resistance MOSFET SCT4036DTW

high-speedSiCin semiconductor

Overview
The SCT4036DTW is a SiC MOSFET in a TSC3PAK surface-mount package featuring top-side heat dissipation. The top heat-dissipation surface enables automated SMD mounting while delivering thermal performance comparable to certain through-hole packages. ROHM's proprietary groove structure secures a 6.66 mm creepage distance, supporting up to 1200 V AC peak in Pollution Degree 2 environments for reliable high-voltage insulation design. The device integrates ROHM 4th Generation SiC MOSFET technology for low Rds(on) and high-speed switching to reduce switching losses and improve power-conversion efficiency. This is a STANDARD GRADE product and is not recommended for automotive safety-critical use.

Key Features

• Wide creepage distance: min. 6.66 mm (supports 1200 V AC peak, Pollution Degree 2)
• Low Rds(on): Typ. 36 mΩ to reduce conduction losses
• High-speed switching and fast reverse recovery to lower switching losses
• Easy to parallel for higher current capacity
• Simple gate-drive characteristics for straightforward implementation
• Pb-free lead plating; RoHS compliant

Package & Mounting
TSC3PAK surface-mount package with top-side heat dissipation (heat face on package top). Enables automated SMD assembly while achieving thermal performance comparable to some through-hole packages. Proprietary groove secures creepage distance for high-voltage insulation design in Pollution Degree 2 environments.

Applications

• On-board chargers and electric compressors for xEVs (STANDARD GRADE; not recommended for automotive safety-critical use)
• PV inverters (solar power inverters)
• High-performance server power supplies and industrial power conversion equipment

Technical specifications

• Part Number: SCT4036DTWTCR
• Model: SCT4036DTW
• Brand: ROHM
• Drain‑Source Voltage (Vds): 750 V
• Drain‑Source On‑state Resistance (Typ.) Rds(on): 36 mΩ
• Generation: 4th Gen (Trench)
• Drain Current (Id): 40 A
• Total Power Dissipation: 128 W
• Junction Temperature (Max.): 175 °C
• Storage Temperature: -40 °C to 175 °C
• Package: TSC3PAK (14.0 x 18.58 mm, t = 3.625 mm)
• Packing: Taping; Unit quantity: 600; Minimum package quantity: 600
• RoHS: Yes; MSL: 1