SiC MOSFET SCT4090KTWHR

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Overview
The SCT4090KTWHR is a SiC MOSFET in the TSC3PAK surface-mount package featuring top-side heat dissipation. TSC3PAK provides heat dissipation comparable to TO-247 class through-hole packages while enabling automated surface-mount assembly. ROHM's groove structure secures a minimum creepage distance of 6.66 mm, supporting 1200 V AC peak in Pollution Degree 2. The device offers low ON resistance and fast switching to reduce switching losses and improve efficiency in power conversion circuits. Typical applications include onboard chargers (OBCs), electric compressors for xEVs, PV inverters and server power supplies.

Key Features

• Qualified to AEC-Q101 (Automotive Grade)
• Wide creepage distance: min. 6.66 mm
• Low ON resistance (low RDS(on))
• Fast switching speed
• Fast reverse recovery
• Easy to parallel
• Simple to drive
• Pb-free lead plating; RoHS compliant

Package & Mechanical

• Package: TSC3PAK (surface-mount with top-side heat dissipation)
• Top-side heat dissipation enables automated mounting with heat dissipation comparable to TO-247 class through-hole packages
• Groove structure securing creepage distance (6.66 mm) to support 1200 V AC peak in Pollution Degree 2
• Package size: 14.0 x 18.58 mm (thickness 3.625 mm)

Applications

• Automotive systems: onboard chargers (OBCs), electric compressors
• xEV power conversion circuits to improve charging speed and vehicle range
• Industrial equipment: PV inverters, high-performance server power supplies

Design resources and supporting information
Design and verification resources are available, including the product data sheet, SPICE/PLECS/PSIM models, application notes (monitoring, snubber circuits, parallel device oscillation suppression, gate drive guidelines), and thermal design/characterization documents specific to TSC3PAK and ROHM 4th Generation SiC MOSFETs.

Technical specifications

• Part Number: SCT4090KTWHRTCR
• Status: Recommended
• Model: SCT4090KTWHR
• Drain-source voltage (V): 1200 V
• Drain-source On-state resistance (Typ.) (RDS(on)): 90 mΩ
• Generation: 4th Gen (Trench)
• Drain current (ID): 18 A
• Total power dissipation (PT): 81 W
• Junction temperature (Max.): 175 °C
• Storage temperature range: -40 to 175 °C
• Package size: 14.0 x 18.58 mm (t = 3.625 mm)
• Packing type: Taping
• Unit quantity: 600 (minimum package quantity: 600)
• RoHS: Yes
• MSL: 1