Not specified MOSFET SIR5402DP

Overview
N-Channel 40 V (D-S) MOSFET in TrenchFET® Gen IV technology designed for power switching and inverter applications.

Key features

• TrenchFET® Gen IV standard level MOSFET
• High Vth design to reduce noise and improve gate stability
• Optimized Qgd / Qgs ratio for efficient switching

Documentation

• Datasheet — N-Channel 40 V (D-S) MOSFET (SIR5402DP)
• Part Marking Information — PowerPAK® and PowerPAIR® marking details for multiple variants
• PAD Pattern — Recommended minimum PADs for PowerPAK® SO-8 Single
• Application Note AN821 — PowerPAK® SO-8 mounting and thermal considerations
• Reel Information — reel packaging data
• Tape Information — PowerPAK® SOIC-8 tape specifications
• Package Information — PowerPAK® SO-8 (Single/Dual) drawings and details
• Package Reliability — environmental and package testing data for PowerPAK® SO-8 solder process
• Product Reliability — 530MC SG process technology reliability data
• Selector Guide — MOSFETs for AI server power solutions

Additional product notes

• ECAD models available for download (Ultra Librarian)
• Buy Now / Request Sample links available on the product page

Specifications

• Model: SIR5402DP
• Device type: N-Channel MOSFET
• Drain-Source voltage (VDS): 40 V (D-S)
• Process / technology: TrenchFET® Gen IV (standard level)
• Design highlights: High Vth to reduce noise; optimized Qgd / Qgs ratio
• Package options: PowerPAK® SO-8 and multiple PowerPAK® / PowerPAIR® variants (see package documentation)
• Typical documentation: datasheet, part marking, PAD/landpattern recommendations, mounting/thermal application note, reel/tape packaging info, package drawings, reliability data, selector guide
• Vishay product page ID reference: 61684