Ceramic substrate AMB

aluminum nitridefor power electronicsmetallic for the electronics industry

Product overview
AMB (Active Metal Brazing) is a high-temperature joining method that creates a chemical bond between ceramic and metal by using active elements (Ti, Zr) in the filler to form a reactive layer wettable by liquid filler metal. The resulting chemical bond delivers high mechanical strength and excellent long-term reliability for power device packaging.

Active elements and processing notes
Active element content is typically maintained between 2% and 8% to preserve activity. Excessive active element content increases solder brittleness and may reduce sealing strength; insufficient content degrades wetting on the ceramic and can prevent complete hermetic sealing.

Advantages

• Chemical bonding between ceramic and active metal solder at elevated temperature → higher bonding strength and improved reliability
• Capability to apply different copper thicknesses on a single plate
• Environmentally friendly process
• High resistance to thermal cycling and low temperatures
• Compatible with full automation for high production efficiency and low manufacturing cost
• Copper thickness 0.1–0.5 mm available, suitable for high-power device packaging

Applications

• SiC power modules
• IGBT modules
• Electric drive inverters
• Photovoltaic inverters
• Wind energy converters
• Industrial frequency converters
• High-power switching power supplies
• 5G base station power supplies
• High-power data center power supplies
• Communication RF modules

Properties
Si3N4 (Silicon Nitride)
Composition: 96% SiN
Thickness (mm): 0.2, 0.32, 0.35, 0.635, 0.4–1.5
Density (g/cm3): 3.2 ± 0.25
Thermal Conductivity (20°C, W/m·K): 85+
Flexural Strength (MPa): 700–800
Dielectric Constant (1 MHz): 8
Dielectric Loss (1 MHz): 0.001
Dielectric Strength (kV/mm): 20
Volume Resistivity (Ω·cm): 1e14

AlN (Aluminum Nitride)
Composition: 96% AlN
Thickness (mm): 0.25, 0.32, 0.635
Density (g/cm3): 3.3
Thermal Conductivity (20°C, W/m·K): 170+
Flexural Strength (MPa): 350
Dielectric Constant (1 MHz): 9
Dielectric Loss (1 MHz): 0.0005
Dielectric Strength (kV/mm): 20
Volume Resistivity (Ω·cm): 1e14

Copper (oxygen-free)
Purity (%): 99.99
Hardness (HV): 60–110
Conductivity (MS/m): 58.6
Thickness (mm): 1.2, 1.0, 0.8, 0.5, 0.4, 0.3, 0.25, 0.2

AMB substrate (general)
Largest size (mm): 190 × 140
Line spacing (mm): ≥0.5
Line width: customized
Peel strength of copper layer (min) (N/mm): >10
Solderability (%): >95%
Delivery: small pieces or panels
Surface finishing: Cu / Au / Ag

Specifications / technical data

• Material options: Si3N4 (96% SiN) and AlN (96% AlN)
• Si3N4 thickness options: 0.2, 0.32, 0.35, 0.635, 0.4–1.5 mm
• AlN thickness options: 0.25, 0.32, 0.635 mm
• Si3N4 density: 3.2 ± 0.25 g/cm³; AlN density: 3.3 g/cm³
• Thermal conductivity: Si3N4 ~85+ W/m·K; AlN ~170+ W/m·K (20°C)
• Flexural strength: Si3N4 700–800 MPa; AlN ~350 MPa
• Dielectric constant / loss: Si3N4 8 / 0.001 (1 MHz); AlN 9 / 0.0005 (1 MHz)
• Dielectric strength: 20 kV/mm (both)
• Volume resistivity: 1e14 Ω·cm (both)
• Copper: oxygen-free, 99.99% purity; conductivity 58.6 MS/m; thickness options 0.2–1.2 mm
• Mechanical / assembly: peel strength >10 N/mm; solderability >95%
• Max substrate size: 190 × 140 mm; min line spacing ≥0.5 mm; customizable line width
• Surface finish options: Cu / Au / Ag