Scanning electron microscope SU9600

for thin-film measurementsfor researchfor materials research

Overview
The SU9600 (T)SEM is a modular hybrid scanning electron microscope combining ultra-high-resolution SEM and analytical STEM with a TEM-compatible sample stage. It enables correlative surface and transmitted-electron analysis in one high-stability platform, supporting UHR-SEM, STEM, 4D-STEM*, EELS* and nano-EDS* for rapid high-resolution imaging and multi-modal material characterization.

Key highlights

• Integrated UHR-SEM and analytical STEM capabilities on a single stable platform
• Ultra-high-resolution imaging from 10 V to 30 kV for surface and structural analysis
• Cold field emission gun, full-immersion objective lens and TEM sample stage (0.34 nm guaranteed @ 30 kV; ~0.2 nm achievable)

Features and benefits

• Comprehensive reflected and transmitted electron detection with energy and angular filtering
• Correlation of SE/BSE surface contrast with BF/ADF/STEM imaging and spectral data (EELS/EDS)
• Sub-nanometer elemental analysis using a high solid-angle windowless EDS detector
• Access to advanced material-property measurements via EELS and 4D-STEM

Technical feature details

• Next-generation cold field emission with NEG for high brightness and reduced chromatic aberration (EELS option)
• Full-immersion objective lens combined with a TEM-like stage for optimal resolution and mechanical stability
• High-resolution imaging across 0.5–30 kV (0.34 nm guaranteed @ 30 kV; ~0.2 nm achievable)
• TEM stage and double-tilt holder for rapid cross-section orientation and zone-axis alignment (optional)
• Compatibility with cryo holders and MEMS holders (optional)

Analytical capabilities

• Sub-nanometer EDS with a high solid-angle windowless detector for fast nanoscale elemental mapping
• 4D-STEM with fast direct-electron detection enabling DPC, ptychography, strain and phase mapping; virtual apertures generate BF/DF/selected-area diffraction images
• EELS at low kV: live elemental imaging, core-loss and plasmon-loss spectroscopy with ~0.35 eV energy resolution using cold FEG

Applications

• Nanomaterials: elemental distribution mapping, nanowire composition, lattice imaging
• Thin films: surface morphology and grain-structure analysis
• Elemental analysis: nanoscale composition and mapping (e.g., Ag/Cu systems)
• Semiconductors: atomic-scale lattice imaging and diffraction analysis

Specifications
SE image resolution: 0.4 nm @ 30 kV; 1.0 nm @ 1 kV; 0.6 nm @ landing 1 kV (with optional deceleration holder and top detector)
STEM image resolution: 0.34 nm @ 30 kV (lattice imaging, option)
Accelerating voltage: 0.5 to 30 kV
Landing voltage: 0.01 to 20 kV
Electrical image shift: Up to ±5 mm (specimen height = 0.0 mm)
Stage traverse: X: ±4.0 mm, Y: ±2.0 mm, Z: ±0.3 mm, T: ±40°
Specimen size - flat specimen stage: 5.0 mm × 9.5 mm × 3.5 mm (H) max
Specimen size - cross section specimen stage: 2.0 mm × 6.5 mm × 5.0 mm (H) max

Notes
* Optional where indicated. Features such as 4D-STEM, EELS and certain holders may be optional depending on configuration.