Tungsten cathodic sputtering target WTi

cathodic titanium

Product overview
WTi (tungsten‑titanium) sputtering targets combine tungsten's high density with titanium's corrosion resistance and adhesion. Typical composition is ~10 wt% Ti. WTi serves as an effective diffusion barrier and adhesion layer in thin‑film PVD processes, preventing unwanted atomic diffusion between functional layers.

Your advantages at a glance

• Purity: > 99.95% (options up to 99.99% for semiconductor use)
• High density: ≥ 98%
• Homogeneous microstructure and titanium distribution
• High sputtering rates due to maximum material density
• Low particle generation during deposition

Areas of application
WTi with approximately 10 wt% Ti is commonly used as a diffusion barrier and adhesion promoter in chip metallization (separating metal layers such as Al or Cu from Si). In flexible CIGS thin‑film solar cells, a WTi barrier prevents Fe diffusion from steel substrates through Mo back contacts into the semiconductor, which can otherwise reduce cell efficiency even at trace levels. WTi is also used where low particle contamination and high deposition speed are required in PVD coatings.

Target formats and supply
Plansee manufactures WTi sputtering targets using powder‑metallurgical processes. Targets are supplied in planar and rotary formats and in various sizes — common maximum diameters up to 450 mm depending on configuration and customer requirements.

Production & quality assurance
Plansee controls the full production chain: powder mixing, pressing, sintering, machining and bonding. Process control ensures consistent density, purity and microstructure. Minimum guaranteed purity is typically 99.95% (3N5); 99.99% (4N) is available for semiconductor applications. High density and purity reduce particle formation and improve coating results.

Relevant publications / R&D

• Studies on particle contamination and nodule formation in W–Ti films relating target properties to particle generation during sputter deposition.
• Articles on advantages of powder metallurgy for sputtering target production.

Technical characteristics / specifications

• Material system: WTi (typical Ti ≈ 10 wt%)
• Density: ≥ 98%
• Purity: > 99.95% (options up to 99.99% for semiconductor)
• Titanium content: ≈ 10 wt%
• Titanium distribution homogeneity: ± 0.5%
• Microstructure: fine grain, < 50 µm grain size
• Available formats: planar and rotary targets; diameters up to 450 mm
• Manufacturing: powder metallurgy (mixing, pressing, sintering, machining, bonding)