ProductSL-G12N
OverviewSL-G12N is an N-type silicon wafer with a 210 mm diameter designed for semiconductor fabrication and research. The wafer is specified for applications requiring controlled resistivity and long minority carrier lifetime, suitable for photovoltaic cells, power devices and advanced device prototyping.
Technical Data- Model: SL-G12N
- Type: N-type silicon wafer
- Diameter: 210 mm
- Resistivity: 0.4–1.6 Ω·cm
- Minority carrier lifetime (MCLT): ≥1000 μs
- Oxygen concentration: ≤12 ppma
- Carbon concentration: ≤1 ppma
Handling and packagingDelivered in protective carrier cassettes or carriers suitable for cleanroom transfer. Handle under ESD-safe conditions and avoid particle contamination. Inspect wafers visually and with standard metrology before processing.
Applications- Photovoltaic cell substrates
- Power semiconductor devices
- Microelectronics research and prototyping
- Device process development and reliability testing