Chamber furnace

crystal growthelectricinert gas

It can melt the silicon materials via the graphite resistance heater in an inert atmosphere, and then grow dislocation-free monocrystal silicon ingot (used for silicon components) though CZ method automatically. It is suitable for 24’’ ingot and compatible with superconducting magnetic field. Diameter of pull chamber 650mm Capable of growing ultra-large ingot 26' Large size, high quality High precision control system Sophisticated monitoring and feedback system & Optional magnetic field & Capable of growing 26' ultra-large ingot used for silicon components High precision control The precision control and long-term stable operation of the equipment can be assured with the features of complete magnetic field control system, brand-new software control system, vision system and ultra-high-precision transmission system. Large size Support all the mainstream ingot sizes on the market, with the largest size up to 26'. Customizable Offer customized products by developing solutions on hot zone structure, magnetic field configuration and others to serve the various needs of customers.