Chamber furnace

crystal growthautomatic

SiC Crystal Growth Furnace allows, in a specific atmosphere, silicon carbide materials to undergo vapor phase transport, chemical reactions, etc., ultimately growing high-quality SiC monocrystal silicon ingot on a seed. Size 6inch/8inch Convexity during crystal growth 1-3mm High-precision intelligent control system, customized service Multi-zone high-precision control Leverage intelligent control system to achieve remote centralized control High output, high stability and optimal space utilization Customized solutions available The Crystal Growth Furnace for Silicon Materials is a critical piece of equipment for growing high-purity, high-quality mono-Si ingots. It typically uses the Czochralski method to grow mono-Si ingots. It melts the silicon materials via the graphite heater in an inert atmosphere, and then dips the seed into the silicon melt. By accurately controlling the seed lift/rotation speed and the crucible lift/rotation speed, silicon atoms are arranged in an orderly, layer-by-layer fashion onto the seed, thereby growing dislocation-free mono-Si ingots. It boasts technical advantages such as large-diameter design, accurate temperature control, and automatic control; the diameter of the ingots grown ranges from Φ360-Φ600mm, with a minimum length of 2m. Professional simulation software Use STR, a professional simulation software, to simulate the entire growth cycle of SiC ingot, providing comprehensive growth solutions to customers. Intelligent control Leverage intelligent control system to achieve remote centralized control. Customizable Offer customized heating method (resistance heating/induction heating) as needed.