Laser cutting machine RM-LS-SiC-1200

for monocrystalline siliconwaferfor the semiconductor industry

By utilizing semi-transparent band lasers to precisely focus on the interior of the ingot, a uniform modification layer is formed through the multi-photon effect, inducing controllable micro-crack propagation. This is followed by an ultrasonic-assisted lift-off process to achieve the complete lift-off of the full substrate. The equipment can efficiently complete SiC ingot lift-off and wafer precision thinning, while being compatible with the lift-off of hard and brittle crystal materials such as GaN and diamond. It features ultra-low lift-off loss, high flatness, no mechanical stress, and high mass production efficiency, making it a core mass production equipment for wide bandgap semiconductor power devices.* Suitable for 8/12 inch Self-developed Core Module Core algorithms and structures for focus tracking, light field control, and guided wafer pickup. Low material loss Total loss after grinding as low as 100um (8-inch conductive). High processing efficiency High processing efficiency: 15 min/wafer. Integrated solution Solution integrating laser modification + ultrasonic-assisted separation + auto wafer pickup + AOI.