Crystal growing machine

The Silicon Carbide Crystal Growth Furnace is an induction-heated system designed to grow silicon carbide single crystals using the physical vapor deposition (PVD) method in an inert (argon) environment. It integrates furnace hardware, vacuum and gas handling, induction heating and computerized automatic control to enable stable, repeatable crystal growth operations with automated process recording.

Product overview:

• Main assemblies: furnace chamber components, upper furnace chamber components, sample support mechanism, temperature measuring window transmission components, vacuum acquisition and measurement system, gas system, water system, induction heating system, automatic control system.

Vacuum chamber structure:

• Growth chamber: quartz tube structure with upper and lower sealing flanges made of 316L stainless steel, surface treated by special process; sealing uses imported fluororubber ring.

Deposition and heating method:

• Induction heating of a graphite crucible containing silicon carbide powder; sublimation and deposition onto a silicon carbide seed (PVD method) in an argon atmosphere.

Electrical / control system:

• Computer control system with touch-screen display; process controlled by a highly reliable programmable computer controller (PCC) allowing fully automatic control and process information recording.

Additional notes:

• Equipment structure and operation are designed for stability and include multiple safety protection facilities; mass flow and temperature control are accurate.

Technical specifications:

• Quartz cavity internal diameter: 400 mm.
• Quartz cavity height: 1100 mm.
• Grown crystal diameter: capable of growing 6 inches.
• Ultimate vacuum degree (cold state, empty furnace): ≤ 6.6E-5 Pa.
• System vacuum leak detection rate (quartz cavity): ≤ 5.0×10-7 Pa·L/s.
• 12-hour pressure-maintaining vacuum index (cold empty furnace): ≤ 5 Pa.
• Sample size / temperature reference: 6 inches (seed/crystal size supported).
• Recommended installation site area: greater than 12 m²; minimum site height: 4.5 m.
• Process control: programmable computer controller (PCC) with touch-screen display and automatic crystal growth control (full-process automation and data recording).