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Magnetron sputtering machine DXJ-450D
for metallization

Magnetron sputtering machine - DXJ-450D - Xiamen Dexing Magnet Tech. Co., Ltd. - for metallization
Magnetron sputtering machine - DXJ-450D - Xiamen Dexing Magnet Tech. Co., Ltd. - for metallization
Magnetron sputtering machine - DXJ-450D - Xiamen Dexing Magnet Tech. Co., Ltd. - for metallization - image - 2
Magnetron sputtering machine - DXJ-450D - Xiamen Dexing Magnet Tech. Co., Ltd. - for metallization - image - 3
Magnetron sputtering machine - DXJ-450D - Xiamen Dexing Magnet Tech. Co., Ltd. - for metallization - image - 4
Magnetron sputtering machine - DXJ-450D - Xiamen Dexing Magnet Tech. Co., Ltd. - for metallization - image - 5
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Characteristics

Options
magnetron
Applications
for metallization

Description

The Single-chamber Magnetron Sputtering System DXJ-450D is intended for research and small-batch production of advanced nanoscale mono- and multilayer thin films, including hard coatings, metal, semiconductor and dielectric films, suitable for universities and research institutes.

Composition
  • The system mainly consists of a sputtering vacuum chamber, magnetron sputtering targets, a water-cooled substrate heating plate, working gas circuit, pumping system, vacuum measurement, electronic control system and installation cabinet.


Technical index
  • Model: DXJ-450D
  • Vacuum chamber size: cylindrical chamber Ø450 × 350 mm
  • Vacuum system configuration: compound molecular pump, mechanical pump, slide valve
  • Ultimate pressure: ≤ 6.67×10⁻⁵ Pa (after bake and degassing)
  • Vacuum recovery time: reaches 6.6×10⁻⁴ Pa in 40 min (after short air exposure and dry chlorine purge before pump-down)
  • Permanent magnetron targets: three permanent targets, target diameter Ø60 mm (one can sputter magnetic material); RF and DC compatible; all three targets can be tilted above sample center; target-to-sample distance adjustable 90–110 mm (upward sputtering 40–80 mm)
  • Substrate system: single water-cooled substrate heating plate with independent heating and cooling; heating furnace removable to install water-cooled plate
  • Sample size: Ø30 mm
  • Motion mode: continuous substrate rotation; rotation speed 5–10 rpm
  • Substrate heating: maximum 600°C ±1°C
  • Negative substrate bias: -200 V
  • Gas circuit: mass flow controllers, 2 channels
  • Computer control: controls sample rotation, baffle switching, target position confirmation, etc.
  • Optional accessories: 6-station substrate rotation plate (replaces removable single water-cooled/heating plate; supports six Ø30 mm substrates; one station for heating furnace; others for water-cooled or natural cooling; MAX substrate temp 600°C ±1°C)
  • Footprint — mainframe: 1300 × 800 mm²
  • Footprint — electric control cabinet: 700 × 700 mm² (2 sets)


Technical specifications
  • Intended use: preparation of nanoscale mono-/multilayer functional films (hard, metal, semiconductor, dielectric)
  • Model: DXJ-450D
  • Chamber external size: Ø450 × 350 mm
  • Ultimate vacuum: ≤ 6.67×10⁻⁵ Pa (post-bake)
  • Standard pumping: compound molecular pump + mechanical pump with slide valve
  • Targets: three permanent magnetron targets Ø60 mm, RF and DC compatible
  • Substrate handling: single removable water-cooled heating plate; sample Ø30 mm; rotation 5–10 rpm; heating up to 600°C ±1°C; negative bias -200 V
  • Gas control: 2-channel mass flow controllers
  • Control: computerized control for rotation, baffle switching and target positioning
  • Footprint: mainframe 1300 × 800 mm²; control cabinets 700 × 700 mm² (two sets)

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.