Magnetron sputtering machine DXJ-560S

for metallization

Overview

Pyriform Double Chambers Magnetron Sputtering System DXJ-560S is a compact R&D and small‑batch production platform for thin films, enabling deposition of nanoscale monolayers and multilayer functional films, hard coatings, metal, semiconductor and dielectric films. The system integrates a pyriform main sputtering vacuum chamber with multiple magnetron targets, a water‑cooled rotating substrate holder, sample load/unload chamber, annealing furnace and complete vacuum, gas and electronic control subsystems.

Composition

• Main pyriform sputtering vacuum chamber
• Permanent magnetron sputtering targets (five targets, Ø60 mm)
• Water‑cooled rotating substrate holder (heat revolution plate), 6 stations
• Sample injection (load) chamber and sample chamber modules
• Annealing furnace (integrated module)
• Backwash target module
• Magnetic sample transfer device
• Working gas circuit with mass flow controllers
• Pumping system (molecular and mechanical pumps)
• Installation/control cabinet(s)
• Vacuum measurement and electronic control system with computer interface

Technical specifications

• Model: DXJ-560S
• Main sputtering chamber: Pyriform sputtering vacuum chamber, size Ø560 × 350 mm
• Sample injection chamber: Cylindrical, horizontal, size Ø250 × 420 mm
• Vacuum configuration: Independent molecular pump and mechanical pump units for main and sample chambers
• Ultimate pressure (after bake & degassing): Main chamber 6.67×10^-6 Pa; Sample chamber ≤6.67×10^-4 Pa
• Vacuum recovery time (after brief air exposure and dry purge): Main chamber to 6.6×10^-4 Pa in ~40 min; Sample chamber to 6.6×10^-3 Pa in ~40 min
• Magnetron targets: Five permanent magnetron targets, target Ø60 mm (one target suitable for magnetic materials); RF and DC sputtering compatible; adjustable target‑to‑substrate distance 40–80 mm
• Substrate holder: 6 stations (one station reserved for heating/annealing module), accepts substrates Ø30 mm up to 6 pieces
• Motion: 0–360° forward/reverse rotation
• Substrate heating (holder): Max 600 ℃ ±1 ℃
• Negative substrate bias: −200 V
• Gas circuit: Mass flow controllers, 2 channels
• Sample chamber modules: Sample load (6 samples per load), annealing furnace (max substrate temp 800 ℃ ±1 ℃), backwash target
• Magnetic transfer: Enables transfer between sputtering and sample chambers
• Computer control: Controls sample rotation, baffles and target position verification
• Floor space required: Mainframe 2600 × 900 mm²
• Electric control cabinets: 700 × 700 mm² (2 sets)

Applications

• Laboratory R&D for thin films and multilayer functional coatings
• Prototype and small‑batch production of optical, electronic, semiconductor and protective coatings
• Deposition of hard films, metal films, dielectric layers and magnetic films

Options & services

• RF/DC power modes and target configurations customizable
• Additional substrate sizes or fixtures on request
• Optional vacuum, pump and gas package upgrades
• Installation, commissioning and operator training available

Control & footprint

• Integrated computer control for process repeatability
• Monitoring of vacuum, gas flows and substrate temperature
• Compact footprint for laboratory environments; mainframe 2600 × 900 mm²