MBE MBE system DXLMBE-450

The DXLMBE-450 Laser Molecular Beam Epitaxy (MBE) system is a laboratory-scale MBE platform for development and small-batch growth of complex thin-film materials, including optical crystals, ferroelectric, ferromagnetic, superconducting and organic compound films. It supports multilayer and superlattice architectures with precise composition and process control.

Composition

• Main vacuum chamber (epitaxy chamber and sample injection chamber)
• Sample injection mechanism and delivery system
• Sample holder with substrate heating and rotation assembly
• Rotating target platform (multi-target, target change via rotation)
• Vacuum pumping and measurement systems
• Electrical control, power distribution and computer control

Applications / Summary
Designed for scientific research and small-batch production in universities and research institutes, the DXLMBE-450 is suited for growth of complex multilayer thin films and superlattices requiring multi-element, high-melting-point or gas-containing sources and tight process control.

Technical specifications

• Model: DXLMBE-450
• Main vacuum chamber: Spherical, Ø450 mm
• Sample injection chamber: Cylindrical, horizontal, Ø150 × 300 mm
• Vacuum system configuration: Main chamber — mechanical pump, molecular pump, ion pump, sublimation pump, valves; Sample injection chamber — mechanical pump, molecular pump, valve
• Ultimate pressure: Main chamber ≤ 5 × 10⁻⁸ Pa (after bake and degassing); Sample injection chamber ≤ 5 × 10⁻³ Pa (after bake and degassing)
• Vacuum recovery time (to 5 × 10⁻³ Pa): Main and sample injection chambers — ≈20 min after brief air exposure (with dry purge before exhaust)
• Rotating target platform: Max target Ø70 mm; up to 4 targets; supports individual rotation and revolution; rotation speed 5–60 rpm
• Substrate heat plate: Sample diameter Ø51 mm; continuous rotation 5–60 rpm; max substrate temperature 800 °C ± 1 °C
• Air/gas circuit: Mass flow controller 1 channel; all-metal angle valve 1 channel
• Optional: RHEED system (max 25 kV, max 100 μA) with intensity oscillation/growth-rate monitoring (camera, hardware and software)
• Laser beam scanning: 2D mechanical scanning stage
• Oxygen plasma generator and power supply: optional
• Computer control: automation of target revolution, target rotation, sample rotation, temperature control, laser scanning and related functions
• Quadrupole mass spectrometer: mass range 1–100
• Floor space: Mainframe 1300 × 850 mm²; Electric control cabinet 700 × 700 mm² (2 sets)