DXP-450A Laser Coating Equipment is designed for preparing superconducting thin films, semiconductor films, ferroelectric films and other functional thin films for scientific research and small-batch preparation. It is suitable for use in universities and research institutions for thin-film material research and development.
Composition- The system mainly consists of sputtering vacuum chamber, rotating target platform, antioxidative substrate heat plate, working air circuit, air-bleed system, installation machine, vacuum measurement, electric control system and related accessories.
Technical Index- Model: DXP-450A
- Main Vacuum Chamber: Sphere, size: Ø450mm
- Configuration of Vacuum System: Mechanical pump, molecular pump, slide valve
- Ultimate Pressure: ≤6.67*10^-5 Pa (after bake and degassing)
- Time of Recovery Vacuum: Reach 5*10^-3 Pa in 20 mins (expose in air for short time and inflate dry chlorine and then begin air exhaust)
- Rotating Target Platform: Target size: Ø60mm or Ø25mm; can install 4 targets at one time; can achieve revolution change target; each target can rotate; rotating speed: 5-60 rpm
- Substrate Heat Plate - Sample Size: 2-inch sample (one piece)
- Substrate Heat Plate - Mode of Motion: Substrate can continuously rotate; revolving speed: 5-60 rpm
- Substrate Heat Plate - Heat: MAX. heat temperature of substrate 800℃±1℃
- Air Circuit System: Quality flow controller, 1 channel
- Laser beam scanning device: Two-dimension scanning mechanical stage, can carry out two-dimensional free scanning
- Computer Control System: Controls revolution of target plate, rotation of targets, rotation of sample, sample temperature control, laser beam scanning and other functions
- Floor Space - Mainframe: 850*850 mm²
- Floor Space - Electric Control Cabinet: 700*700 mm² (1 set)
Technical Specifications- Model: DXP-450A
- Main vacuum chamber geometry & size: Spherical chamber Ø450 mm
- Vacuum system components: Mechanical pump + molecular pump + slide valve
- Ultimate vacuum: ≤6.67*10^-5 Pa (post bake/degassing)
- Typical recovery to 5*10^-3 Pa: ~20 minutes (procedure includes short air exposure and dry chlorine inflation before exhaust)
- Target configuration: Up to 4 targets (Ø60 mm or Ø25 mm), individually rotatable; platform rotation 5-60 rpm
- Substrate handling: 2-inch sample (one piece), continuous substrate rotation (5-60 rpm)
- Max substrate temperature: 800℃ ±1℃
- Gas/air circuit: Single-channel mass/quality flow controller
- Laser scanning: 2D mechanical scanning stage for flexible scanning
- Control: Integrated computer control for targets, sample rotation, temperature, and laser scanning
- Footprint: Mainframe 850×850 mm²; Electric control cabinet 700×700 mm² (1 set)