Eutectic die bonder CoS

for die-attachflip-chipepoxy

Overview
ASMPT AMICRA CoS is a purpose-built multi-die bonder for Chip-on-Submount applications. It performs high-precision multi-die placement on singulated submounts using eutectic bonding (ceramic pulse heater or localized non-contact laser heating) and supports epoxy stamping for solder paste or epoxy workflows. The bonding table features two chucks for parallel handling: the chip side uses ASMPT AMICRA dynamic alignment for precise pick-and-place while the submount side handles input/output of substrates.

Features

• Placement accuracy up to ±1.5 µm @ 3σ
• Dedicated for chip-on-chip, submount and carrier assembly
• Manual wafer and substrate loading/unloading
• Typical cycle time 6–10 s (application dependent)
• Die size (laser heating): 0.15 x 0.15 mm – 3 x 8 mm
• Die size (pulse heating): 0.15 x 0.15 mm – 8 x 8 mm
• Substrate size: 0.3 x 0.3 mm – 16 x 16 mm
• Dynamic Component Alignment for active alignment during pick-and-place
• Die attach and flip-chip capability
• Separate die eject system for chip and submount handling
• Eutectic bonding with heated bondhead (up to 350°C) or ceramic pulse heater (up to 400°C)
• Two pickup heads for submount load and unload
• Active Bond Force Control with range 5–500 g
• Post-bond inspection and wafer-mapping included
• Submount input/output compatible with Wafer, Gel Pak or Waffle Pack

Optional

• Flip Chip Unit
• Epoxy Stamping Unit
• Dispensing Unit
• Localized Laser Heating Unit for non-contact substrate heating (up to 450°C)
• Additional custom options available on request

Technical specifications

• Placement accuracy: up to ±1.5 µm @ 3σ
• Bonding methods: eutectic bonding (ceramic pulse heater or localized laser heating), epoxy stamping (optional)
• Cycle time: reported down to 6 s; typical 6–10 s depending on application
• Die size (laser heating): 0.15 x 0.15 mm – 3 x 8 mm
• Die size (pulse heating): 0.15 x 0.15 mm – 8 x 8 mm
• Substrate size: 0.3 x 0.3 mm – 16 x 16 mm
• Heated bondhead max temperature: up to 350°C
• Ceramic pulse heater max temperature: up to 400°C
• Optional laser heating max temperature: up to 450°C
• Bond force control: Active Bond Force Control; bond force range 5–500 g
• Bonding table: two bonding chucks
• Handling: two pickup heads for submount load/unload
• Separate die eject system for chip and submount
• Integrated post-bond inspection and wafer-mapping
• Submount handling: input/output stage compatible with Wafer, Gel Pak or Waffle Pack