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Monochromatic LED VTE1291-1Hinfrarednear-infraredradial-lead
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Characteristics
- Spectrum
- monochromatic, infrared, near-infrared
- Mounting
- radial-lead, through-hole
- Electrical power
Min.: 0.02 W
(0.000027 hp)Max.: 0.02 W
(0.000027 hp)
Description
Product overview
The VTE1291-1H is an 880 nm Infrared Emitting Diode (IRED) in a T-1 ¾ (5 mm) plastic package. It delivers a peak output power of 20 mW and a narrow emission profile with a half-power beam angle of ±12°. The device incorporates a large-area GaAlAs chip enabling high-current operation in continuous-wave (CW) and pulsed modes, and supports an operating temperature range from -40 to 100 °C.
Applications
Technical specifications
The VTE1291-1H is an 880 nm Infrared Emitting Diode (IRED) in a T-1 ¾ (5 mm) plastic package. It delivers a peak output power of 20 mW and a narrow emission profile with a half-power beam angle of ±12°. The device incorporates a large-area GaAlAs chip enabling high-current operation in continuous-wave (CW) and pulsed modes, and supports an operating temperature range from -40 to 100 °C.
Applications
- Light barriers and safety curtains
- Optical switches and sensors
- IR illumination for detection systems
- Short-range optical communication
Technical specifications
- Peak wavelength: 880 nm
- Total peak power: 20 mW
- Half-power beam angle: ±12°
- Package: T-1 ¾ (5 mm) plastic package
- Operation modes: Continuous Wave (CW) and pulsed operation
- Die/chip: Large-area GaAlAs chip for high-current CW and pulsed operation
- Operating temperature range: -40 to 100 °C
- Part number: VTE1291-1H
Catalogs
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
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