Pulsed laser diode PVGR4S12H

nanosecondsolid-statenear-infrared

Product overview
The PVGR4S12H is a metal‑packaged pulsed laser diode designed for 1550 nm operation. It integrates a single‑cavity, quad‑stack chip with a 300 µm (12 mil) stripe and is supplied in a 9 mm CD metal package. The device delivers high peak pulsed power, with a tested peak output of 58 W @ 40 A using a 150 ns pulse.

Technology and performance
MOCVD‑grown double heterostructure quantum‑well design optimized for 1550 nm center wavelength. The wavelength selection targets higher permissible emission levels for eye‑safe operation (facilitating potential Class 1 operation under applicable FDA/eye‑safety limits). Multiple peak output variants are offered to match system requirements.

Features

• Metal‑packaged pulsed laser diode for industrial applications
• Single‑cavity, quad‑stack chip architecture
• 300 µm stripe width (12 mil)
• Available in multiple package options, including 9 mm CD metal package

Documentation
Datasheet available with electrical, optical and mechanical specifications, test conditions and handling recommendations.

Technical specifications

• Center wavelength: 1550 nm
• Chip architecture: single‑cavity, quad‑stack
• Stripe width: 300 µm (12 mil)
• Tested peak output: 58 W @ 40 A with 150 ns pulse
• Available peak output variants: 7 W, 14 W, 58 W
• Peak pulsed power capability: up to 58 W (model dependent)
• Active structure: quantum well
• Growth method: MOCVD double heterostructure
• Packaging: metal package (example: 9 mm CD)