Pulsed laser diode PVGR1S06H

solid-stateinfrarednear-infrared

Product overview
The PVGR1S06H is a metal-packaged 1550 nm pulsed laser diode comprising a single-stack, single-cavity chip with a 150 µm stripe width. It delivers a tested peak output of 7 W at 20 A with a 150 ns pulse width and is available in other package variants.

Details
MOCVD-grown double heterostructure laser diodes at 1550 nm are offered in standard peak output levels of 7 W, 14 W and 58 W. The emission is centered at 1550 nm to take advantage of the higher maximum permitted emission levels at that wavelength for eye-safe operation under applicable regulations (e.g. FDA). Class 1 operation may therefore be achievable at relatively high output powers.

Features

• 1550 nm center wavelength
• Available stacked devices to increase output power
• Quantum well structure
• High peak pulsed power capability: up to 50 W

Technical specifications

• Model: PVGR1S06H
• Package: metal packaged, 9 mm CD package
• Device type: single stack, single cavity chip
• Stripe width: 150 µm
• Tested performance: 7 W output at 20 A with a 150 ns pulse
• Standard peak output powers offered: 7 W, 14 W, 58 W
• Center wavelength: 1550 nm
• Growth/structure: MOCVD-grown double heterostructure with quantum well
• Peak pulsed power capability: up to 50 W
• Design note: optimized for operation at 1550 nm to take advantage of increased permitted emission levels for eye-safe (Class 1) operation