Pulsed laser diode PVGS1S06H

nanosecondnear-infraredNIR

Description The PVGS1S06H is a metal-packaged 1550 nm pulsed laser diode built from a single-stack, single-cavity chip with a 150 µm stripe width. It delivers 7 W at 20 A when tested with a 150 ns pulse and is available in various packages, including TO-52.

Additional information These devices are MOCVD-grown double-heterostructure laser diodes centered at 1550 nm, offered with standard peak output power options of 7 W, 14 W and 58 W. The 1550 nm center wavelength provides advantages in permitted emission limits for eye-safe operation under FDA guidance; Class 1 operation can therefore be achievable at relatively high peak powers. Stacked devices are available to further increase output power.

Features

• Metal packaged
• Single-stack, single-cavity chip
• 150 µm stripe width
• 7 W @ 20 A tested with a 150 ns pulse
• Available in various packages (including TO-52)

Technical specifications

• 1550 nm center wavelength
• Available stacked devices to increase output power
• Quantum well structure (double heterostructure)
• High peak pulsed power: up to 50 W
• Peak output powers offered as standard: 7 W, 14 W, 58 W