Pulsed laser diode PVGR2S06H

solid-statenear-infrareddiode

Overview
The PVGR2S06H is a metal-packaged pulsed laser diode optimized for 1550 nm operation. It integrates a single-cavity, dual-stack chip with a 150 µm stripe and is provided in package options such as a 9 mm CD enclosure in a 6 mils PLD configuration. Typical tested output for this device is 24 W at 20 A using a 150 ns pulse.

Technology and application notes
Devices in this family are MOCVD-grown double-heterostructure laser diodes with quantum wells, centered at 1550 nm. Standard peak outputs for the family include 7 W, 14 W and 58 W. The 1550 nm wavelength permits higher allowed emission levels for improved eye-safety, facilitating potential Class 1 operation at elevated peak powers where applicable.

Key features

• 1550 nm center wavelength
• Metal-packaged pulsed laser diode
• Single-cavity, dual-stack chip architecture
• 150 µm stripe width
• Tested performance: 24 W @ 20 A (150 ns pulse)
• Stacked device options to increase output power
• Quantum-well double-heterostructure grown by MOCVD
• High peak pulsed power capability: up to 50 W

Specifications

• Model: PVGR2S06H
• Wavelength (center): 1550 nm
• Chip architecture: single-cavity, dual-stack
• Stripe width: 150 µm
• Package: metal-packaged (example: 9 mm CD package)
• PLD specification: 6 mils PLD
• Typical tested output: 24 W at 20 A (150 ns pulse)
• Peak pulsed power capability: up to 50 W
• Growth/structure: MOCVD-grown double heterostructure with quantum wells
• Standard family peak outputs: 7 W, 14 W, 58 W
• Designed to enable higher permitted emission levels at 1550 nm for improved eye-safety (potential for Class 1 operation)