Pulsed laser diode PVGS2S06H

nanosecondshort-pulsesolid-state

Overview
The PVGS2S06H is a metal‑packaged 1550 nm pulsed laser diode featuring a single‑cavity, dual‑stack chip with a 150 µm stripe width. It is available in multiple package options (including TO‑52) and is engineered for high peak pulsed power performance.

Technology and Performance
The device is a MOCVD‑grown double heterostructure centered at 1550 nm to leverage the higher permissible emission levels for eye‑safe operation. When integrated and configured appropriately, Class 1 operation can be achievable at relatively high output power levels. The architecture is optimized for high peak power pulsed operation.

Key Features

• Metal‑packaged device (TO‑52 options)
• Single‑cavity, dual‑stack chip architecture
• 150 µm stripe width
• Designed for high peak pulsed power (short‑pulse operation)

Applications / Notes
Offered in various packages to meet system integration requirements. Stacked configurations allow scalable peak output power for applications such as range finding, LIDAR, free‑space communications and test/measurement systems where short high‑peak pulses are required.

Technical specifications

• Center wavelength: 1550 nm
• Chip architecture: single‑cavity, dual‑stack
• Stripe width: 150 µm
• Tested example output: 24 W at 20 A with a 150 ns pulse
• High peak pulsed power: up to 50 W
• Standard offered peak output powers in PVG family: 7 W, 14 W, and 58 W (product family values)
• Structure: quantum well
• Manufacturing: MOCVD‑grown double heterostructure